Quantitative mobility spectrum analysis (QMSA) for Hall characterization of electrons and holes in anisotropic bands

Journal of Electronic Materials

Volumn 28, Issue 5, 1999, Pages 548-552

  Vurgaftman, I ^a   Meyer, J R ^a   Hoffman, C A ^a   Cho, S ^b   Ketterson, J B ^b   Faraone, L ^c   Antoszewski, J ^c   Lindemuth, J R ^d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

^c UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^d Lake Shore Cryotronics Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BAND STRUCTURE; BISMUTH; CADMIUM COMPOUNDS; CARRIER CONCENTRATION; CARRIER MOBILITY; MAGNETIC FIELD EFFECTS; SILICON; SPECTRUM ANALYSIS; SUPERLATTICES; THERMOELECTRICITY; THIN FILMS;

ANISOTROPIC BANDS; ANISOTROPIC CONDUCTION; MAGNETOTRANSPORT; QUANTITATIVE MOBILITY SPECTRUM ANALYSIS; THERMOELECTRIC PROPERTIES;

ELECTRONS;

EID: 0032682603     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0110-2     Document Type: Article

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