Preparation of Al-O-N films by electron cyclotron resonance plasma-assisted chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 A, 1999, Pages 3668-3674

  Goto, Takashi ^a   Zhang, Wei ^a   Hirai, Toshio ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; COMPOSITION EFFECTS; ELECTRON CYCLOTRON RESONANCE; FILM PREPARATION; PHOTONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SYNTHESIS (CHEMICAL);

ALUMINUM OXYNITRIDES;

OPTICAL FILMS;

EID: 0032682353     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3668     Document Type: Article

References (27)

1. B. Lux, C. Colombier, H. Altena and K. Stjemberg: Thin Solid Films 138 (1986) 49.
2. T. Mäntylä, P. Vuoristo, A. Telama and P. Kettunen: Thin Solid Films 126 (1985) 43.
3. T. Mäntylä, P. Vuoristo and P. Kettunen: Thin Solid Films 118 (1984) 437.
4. K. I. Kirov, E. D. Atanasova and N. A. Inanov: Thin Solid Films 41 (1977) L21
5. R. S. Nowicki: J. Vac. Sci. Technol. 14 (1977) 127.
6. S. Maniv, W. D. Westwood and E. Colombini: J. Vac. Sci. Technol. 20 (1982) 162.
7. J. A. Thornton and J. L. Lamb: Thin Solid Films 83 (1981) 377.
8. E. S. Dettmer, B. M. Romenesko, H. K. Charles Jr., B. G. Carkhuff and D. J. Merrill: IEEE Trans. Components, Hybrids, Manuf. Technol. 12 (1989) 543.
9. L. M. Sheppard: Ceram. Bull. 69 (1990) 1801.
10. Y. Someno, M. Sasaki and T. Hirai: Jpn. J. Appl. Phys. 30 (1991) 1792.
11. V. J. Silvestri, E. A. Irene, S. Zirinsky and J. D. Kuptsis: J. Electron. Mater. 4 (1975) 429.
12. J. D. Targove, L. J. Lingg, J. P. Lehan, C. K. Hwangbo, H. A. Macleod, J. A. Leavitt and L. C. McIntyre: Materials Modification and Growth Using Ion Beams, eds. U. Gibson, A. E. White and P. P. Pronko, Mater. Res. Soc. Symp. Proc. 93 (1987) 311.
13. H. Birey-Demiryont, S.-J. Park and J. R. Sites: J. Vac. Sci. Technol. A 16 (1979) 2086.
14. H. Demiryont, L. R. Thompson and G. J. Collins: Appl. Opt. 25 (1986) 311.
15. C. K. Hwangbo, L. J. Lingg, J. P. Lehan, H. A. Macleod and F. Suits: Appl. Opt. 28 (1989) 2779.
16. W. Zhang, Y. Someno, M. Sasaki and T. Hirai: Jpn. J. Appl. Phys. 32 (1993) L116.
17. W. Zhang, Y. Someno, M. Sasaki and T. Hirai: J. Cryst. Growth 130 (1993) 308.
18. W. Zhang, Y. Someno, M. Sasaki and T. Hirai: J. Cryst. Growth 132 (1993) 337.
19. W. Zhang, R. Vargas, T. Goto, Y. Someno and T. Hirai: Appl. Phys. Lett. 64 (1994) 1359.
20. T. Goto, J. Tsuneyoshi, K. Kaya and T. Hirai: J. Mater. Sci. 27 (1992) 247.
21. Y. Someno, M. Sasaki and T. Hirai: Jpn. J. Appl. Phys. 29 (1990) L358.
22. C. D. Wagner, W. M. Riggs, H. F. Hillery, T. G. Kinsky, H. A. Six, W. T. Jansen and J. A. Taylor: J. Vac. Sci. Technol. 21 (1982) 933.
23. D. Briggs and M. P. Seah: Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy (Wiley, Chichester, 1990) 2nd ed, p. 602.
24. J. A. Kovacich, J. Kasperkiewicz, D. Lichtman and C. R. Aita: J. Appl. Phys. 55 (1984) 2935.
25. A. D. Katnani and K. I. Papathomas: J. Vac. Sci. Technol. A 5 (1987) 1335.
26. M. Didomenico and S. H. Wemple: J. Appl. Phys. 40 (1969) 720.
27. T. S. Moss, G. J. Burrel and B. Ellis: Semiconductor Optoelectronics (Butterworths, London, 1973) p. 23.