Photoconductivity kinetics in high resistivity n-PbTe(Ga) epitaxial films

Semiconductor Science and Technology

Volumn 14, Issue 8, 1999, Pages 679-684

  Akimov, B A ^a   Bogoyavlenskiy, V A ^a   Ryabova, L I ^a   Vasil'kov, V N ^b   Zimin, S P ^c  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b Federal State Unitary Enterprise   (Russian Federation)

^c YAROSLAVL STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; EPITAXIAL GROWTH; INFRARED RADIATION; LIGHT SENSITIVE MATERIALS; PHOTOCONDUCTING MATERIALS; PHOTOCONDUCTIVITY; RELAXATION PROCESSES; SEMICONDUCTING LEAD COMPOUNDS; SILICA;

LEAD TELLURIDE; OPTICAL RELAXATION;

SEMICONDUCTING FILMS;

EID: 0032681327     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/8/302     Document Type: Article

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