Electronic structure, metastability and transport properties of optimized amorphous silicon-germanium alloys

Materials Research Society Symposium - Proceedings

Volumn 507, Issue , 1999, Pages 769-774

  Chen, Chih Chiang ^a   Lubianiker, Yoram ^a   Cohen, J David ^a   Yang, Jeffrey C ^a   Guha, Subhendu ^a   Wickboldt, Paul ^a   Paul, William ^a  

^a UNIVERSITY OF OREGON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ALLOYS; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; FERMI LEVEL; HYDROGENATION; MATHEMATICAL MODELS; PHOTOLYSIS; SEMICONDUCTOR DOPING;

BOND-BREAKING MODEL; SILICON GERMANIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032679085     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (25)