Multiband and multidimensional quantum transport

Microelectronics Journal

Volumn 30, Issue 10, 1999, Pages 985-1000

  Ting, D Z Y ^a,b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRON TUNNELING; MOS DEVICES; QUANTUM ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SURFACE ROUGHNESS;

MULTIBAND QUANTUM TRANSMITTING BOUNDARY METHODS (MQTBM); OPEN-BOUNDARY PLANAR SUPERCELL STACK METHODS (OPSSM); QUANTUM CONFINEMENT; THREE-DIMENSIONAL QUANTUM TRANSPORT;

HETEROJUNCTIONS;

EID: 0032678776     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(99)00065-8     Document Type: Article

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