Effect of magnetic impurities on TMR at finite bias voltage

Journal of Magnetism and Magnetic Materials

Volumn 198, Issue , 1999, Pages 158-160

  Nonoyama, S ^a   Itoh, H ^b   Oguri, A ^c   Inoue, J ^b   Bruno, P ^d  

^a YAMAGATA UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c Osaka City U   (Japan)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; GREEN'S FUNCTION; IMPURITIES; MAGNETORESISTANCE; TUNNEL JUNCTIONS;

FERROMAGNETIC TUNNEL JUNCTIONS; MAGNETIC IMPURITIES; TUNNELING MAGNETORESISTANCE;

MAGNETIC DEVICES;

EID: 0032678449     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(98)01052-X     Document Type: Article

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