Influence of the H2 dilution and filament temperature on the properties of P doped silicon carbide thin films produced by hot-wire technique

Materials Research Society Symposium - Proceedings

Volumn 507, Issue , 1999, Pages 831-836

  Ferreira, I ^a   Aguas, H ^a   Mendes, L ^a   Fernandes, F ^a   Fortunato, E ^a   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; HYDROGEN; MORPHOLOGY; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; SILICON CARBIDE; SURFACE PROPERTIES;

HOT-WIRE TECHNIQUE; HYDROGEN DILUTION;

SEMICONDUCTING FILMS;

EID: 0032678424     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)