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Volumn 14, Issue 3, 1999, Pages 293-297
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Temperature dependent carrier escape from quantum well states in GaAs/GaAlAs graded index laser structures
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
ELECTRON ENERGY LEVELS;
ELECTRON TRANSITIONS;
ELECTRON TRANSPORT PROPERTIES;
PHOTOCURRENTS;
QUANTUM EFFICIENCY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR JUNCTIONS;
CARRIER ESCAPE ENERGY;
NONRADIATIVE PAIR RECOMBINATION;
POLARIZATION DEPENDENT PHOTOCURRENT ANALYSIS;
QUANTUM WELL LASERS;
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EID: 0032678047
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/14/3/015 Document Type: Article |
Times cited : (6)
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References (17)
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