Influence of unbalanced magnetron and penning ionization for RF reactive magnetron sputtering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1, 1999, Pages 186-191

  Miyazaki, Hidetoshi ^a   Kamei, Masayuki ^a   Shigesato, Yuzo ^b   Yasui, Itaru ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b AOYAMA GAKUIN UNIVERSITY   (Japan)

Author keywords

Metal insulator transition; Plasma diagnostics; Reactive sputtering; Self bias; Unbalanced magnetron; Vanadium oxide

Indexed keywords

CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON TRANSITIONS; HELIUM; IONIZATION; MAGNETRON SPUTTERING; MAGNETRONS; OPTICAL PROPERTIES; PLASMA DIAGNOSTICS; THERMAL EFFECTS; VANADIUM COMPOUNDS;

BALANCED MAGNETRONS; METAL INSULATOR TRANSITION; PENNING IONIZATION; REACTIVE SPUTTERING; UNBALANCED MAGNETRONS; VANADIUM DIOXIDE;

SEMICONDUCTING FILMS;

EID: 0032677725     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.186     Document Type: Article

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