Characterization of oxide etching and wafer cleaning using vapor phase anhydrous hydrofluoric acid and ozone

Microelectronics Reliability

Volumn 39, Issue 2, 1999, Pages 311-316

  Bauer, A J ^a   Froeschle, B ^b   Beichele, M ^a   Ryssel, H ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

^b STEAG AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; HYDROFLUORIC ACID; MICROELECTRONIC PROCESSING; OZONE; SEMICONDUCTOR GROWTH; SILICA;

VAPOR PHASE CLEANING (VPC) MODULE;

SILICON WAFERS;

EID: 0032677369     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00226-1     Document Type: Article

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