Optical characterisation of quantum well infra-red detector structures

IEE Proceedings: Optoelectronics

Volumn 146, Issue 2, 1999, Pages 89-92

  Guzman A ^a   Sanchez Rojas J L ^a   Tijero, J M G ^b   Sanchez J J ^a   Hernando, J ^a   Calleja, E ^a   Munoz E ^a   Vergara, G ^c   Montojo, M T ^c   Gomez L J ^c   Rodriiguez P ^c   Almazan R ^c   Verdu M ^c  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c DEPT OF ENVIRONMENTAL CHEMISTRY   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED DETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL INFRARED DETECTORS;

PHOTODETECTORS;

EID: 0032676840     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:19990183     Document Type: Article

References (12)

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