Observation of a structural transition during the low-temperature growth of the Si(111)7×7-Pb interface

Surface Science

Volumn 424, Issue 2, 1999, Pages 169-178

  Edwards, K A ^a   Howes, P B ^a   Macdonald, J E ^a   Hibma, T ^b   Bootsma, T ^b   James, M A ^c  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF GRONINGEN   (Netherlands)

^c UNIVERSITY OF LEICESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; CRYSTALLIZATION; EPITAXIAL GROWTH; LEAD; MATHEMATICAL MODELS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; X RAY CRYSTALLOGRAPHY;

STRUCTURAL TRANSITION;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0032675481     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00880-2     Document Type: Article

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