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Journal of Materials Science

Volumn 34, Issue 2, 1999, Pages 267-271

Annealing characteristics of Si doped amorphous silica films by rf sputtering

(4) Yoshida, S a Hanada, T b Tanabe, S b Soga, N b

a UNIVERSITY OF SHIGA PREFECTURE (Japan)

b KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; DEPOSITION; DOPING (ADDITIVES); FILM PREPARATION; MAGNETRON SPUTTERING; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; RANDOM PROCESSES; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

INFRARED ABSORPTION; X RAY FLUORESCENCE ANALYSIS;

AMORPHOUS FILMS;

EID: 0032673818 PISSN: 00222461 EISSN: None Source Type: Journal
DOI: 10.1023/A:1004441203187 Document Type: Article

Times cited : (5)

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