Low noise CMOS readout for CdZnTe detector arrays

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 428, Issue 1, 1999, Pages 113-117

  Jakobson, C G ^a   Asa, G ^a   Lev, S Bar ^a   Nemirovsky, Y ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDWIDTH; CAPACITANCE; DETECTORS; GAMMA RAYS; MOSFET DEVICES; SEMICONDUCTING CADMIUM COMPOUNDS; SPURIOUS SIGNAL NOISE; X RAYS;

BANDWIDTH OPTIMIZATION; CADMIUM ZINC TELLURIDE DETECTOR ARRAYS; CAPACITANCE MATCHING; CHARGE SENSITIVE PREAMPLIFIERS; LOW NOISE ANALOG PROCESS; LOW NOISE CMOS READOUT; METAL OXIDE SEMICONDUCTOR IMPLEMENTATION SERVICE; MULTI CHIP PROGRAM; MULTIPLEXER; SEMI GAUSSIAN PULSE SHAPE;

CMOS INTEGRATED CIRCUITS;

EID: 0032672509     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)01587-3     Document Type: Article

References (9)

1. T.E. Schlesinger, Ralph B. James, 'Semiconductors and semimetals', vol. 43, Academic Press, New York, 1995 (Chapter 9).
2. Barber H.B. J. Electron. mater. 25(8):1996;1232.
3. Gaalema S. IEEE Trans. Nucl. Sci. NS-32(1):1985;417.
4. Jakobson C.G., Nemirovsky Y. IEEE Trans. Nucl. Sci. NS-44(1):1997;20.
5. Gregorian R., Martin K.W., Temes G.C. Proc. IEEE. 71(8):1983;941.
6. Nezer Y. Proc. IEEE. 69(6):1981;728.
7. Nygard E.et al. Nucl. Instr. and Meth. A. 301:1991;516.
8. Jakobson C.G., Bloom I., Nemirovsky Y. Solid-State Electronics. 42(10):1998;1807.
9. Metal Oxide Semiconductor Implementation Service (MOSIS) A multi chip project fabrication service run by Advanced Research Projects Agency (ARPA), USA.