Multiple-valued content-addressable memory using metal-ferroelectric-semiconductor FETs

Proceedings of The International Symposium on Multiple-Valued Logic

Volumn , Issue , 1999, Pages 30-35

  Hanyu, Takahiro ^a   Kimura, Hiromitsu ^a   Kameyama, Michitaka ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASSOCIATIVE STORAGE; COMPARATOR CIRCUITS; FIELD EFFECT TRANSISTORS; LOGIC DEVICES; NONVOLATILE STORAGE; POLARIZATION; THRESHOLD VOLTAGE;

METAL-FERROELECTRIC-SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MFSFET); NONVOLATILE MULTIPLE-VALUED CONTENT ADDRESSABLE MEMORY (MVCAM);

MANY VALUED LOGICS;

EID: 0032672079     PISSN: 0195623X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)