Characterization of H-related defects in H-implanted Si with slow positrons

Applied Surface Science

Volumn 149, Issue 1, 1999, Pages 188-192

  Fujinami, M ^a   Suzuki, R ^b   Ohdaira, T ^b   Mikado, T ^b  

^a NIPPON STEEL CORPORATION   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; HYDROGEN; ION IMPLANTATION; LATTICE CONSTANTS; POSITRONS;

VOID DENSITY;

SEMICONDUCTING SILICON;

EID: 0032671831     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00198-1     Document Type: Article

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