Effects of Impurity between epitaxial layer and substrate on current transient for GaAs metal-semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1, 1999, Pages 22-25

  Tanaka, Shuichi ^a   Ishii, Hirotatsu ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

AlGaAs; Deep level; DLTS; GaAs; Impurity; MESFET; MOCVD

Indexed keywords

COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENTS; ELECTRON EMISSION; ELECTRON TRAPS; IMPURITIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES;

ALUMINUM GALLIUM ARSENIDE; DRAIN BIAS PULSED CURRENT; ENERGY BAND DIAGRAM;

MESFET DEVICES;

EID: 0032671438     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.22     Document Type: Article

References (5)

1. D. V. Lang: J. Appl. Phys. 45 (1974) 3023.
2. J. A. Borsuk and R. M. Swanson: IEEE Trans. Electron Devices 27 (1980) 1980.
3. S. R. Blight, R. H. Wallis and H. Thomas: Electron. Lett. 22 (1986) 47.
4. Y. Tokuda and A. Usami: Jpn. J. Appl. Phys. 22 (1983) 371.
5. M. Takikawa and M. Ozeki: Jpn. J. Appl. Phys. 24 (1985) 303.