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Volumn 42, Issue 4, 1999, Pages 241-247

Off-axis electron holography of nearly-spherical faceted voids in self-annealed implanted silicon

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HOLOGRAPHY; IMAGE RECONSTRUCTION; ION IMPLANTATION; POINT DEFECTS;

EID: 0032671343     PISSN: 10445803     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1044-5803(99)00018-2     Document Type: Article
Times cited : (1)

References (16)
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    • IOP Publishing, Bristol, UK
    • D. M. Follstaedt and S. M. Meyers: Formation of cavities in Si and their chemisorption of metals. Proc. Microscopy of Semiconducting Materials 1995, IOP Publishing, Bristol, UK, p. 481-484 (1995).
    • (1995) Proc. Microscopy of Semiconducting Materials 1995 , pp. 481-484
    • Follstaedt, D.M.1    Meyers, S.M.2
  • 3
    • 0345422678 scopus 로고
    • Self-annealing of ion-implanted silicon: First experimental results
    • Cembali G., Merli P.G., Zignani F. Self-annealing of ion-implanted silicon. first experimental results Appl. Phys. Lett. 38:1981;808.
    • (1981) Appl. Phys. Lett. , vol.38 , pp. 808
    • Cembali, G.1    Merli, P.G.2    Zignani, F.3
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    • 0344128990 scopus 로고
    • Lifetime control in silicon devices by voids induced by He ion implantation
    • Ranieri V., Fallica G., Libertino S. Lifetime control in silicon devices by voids induced by He ion implantation. Appl. Phys. Lett. 69:1993;9012.
    • (1993) Appl. Phys. Lett. , vol.69 , pp. 9012
    • Ranieri, V.1    Fallica, G.2    Libertino, S.3
  • 8
    • 0345422679 scopus 로고
    • Characterization of defects produced during self-annealing implantation of As in silicon
    • Lulli G., Merli P.G., Migliori A., Matteucci G., Stanghellini M. Characterization of defects produced during self-annealing implantation of As in silicon. J. Appl. Phys. 68:1990;2708.
    • (1990) J. Appl. Phys. , vol.68 , pp. 2708
    • Lulli, G.1    Merli, P.G.2    Migliori, A.3    Matteucci, G.4    Stanghellini, M.5
  • 9
    • 0042487981 scopus 로고
    • Electron holography reveals the internal structure of palladium nano-particles
    • A. Tonomura, L.F. Allard, G. Pozzi, D.C. Joy, & Y.A. Ono. Elsevier Science: North Holland Delta Series
    • Datye A.K., Kalakkad D.S., Völkl E., Allard L.F. Electron holography reveals the internal structure of palladium nano-particles. Tonomura A., Allard L.F., Pozzi G., Joy D.C., Ono Y.A. Electron Holography. 1995;199 North Holland Delta Series, Elsevier Science.
    • (1995) Electron Holography , pp. 199
    • Datye, A.K.1    Kalakkad, D.S.2    Völkl, E.3    Allard, L.F.4
  • 11
    • 0042308944 scopus 로고
    • Sensitivity-enhanced electron-holographic interferometry and thickness-measurement applications at atomic scale
    • Tonomura A., Matsuda T., Kawasaki T., Endo J., Osakabe N. Sensitivity-enhanced electron-holographic interferometry and thickness-measurement applications at atomic scale. Phys. Rev. Lett. 54:1985;60.
    • (1985) Phys. Rev. Lett. , vol.54 , pp. 60
    • Tonomura, A.1    Matsuda, T.2    Kawasaki, T.3    Endo, J.4    Osakabe, N.5
  • 14
    • 0028821971 scopus 로고
    • A software package for the processing and reconstruction of electron holograms
    • Völkl E., Allard L.F., Frost B. A software package for the processing and reconstruction of electron holograms. J. Microsc. 180:1995;39.
    • (1995) J. Microsc. , vol.180 , pp. 39
    • Völkl, E.1    Allard, L.F.2    Frost, B.3
  • 16
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    • Relative free energies of Si surfaces
    • Follstaedt D.M. Relative free energies of Si surfaces. Appl. Phys. Lett. 62:1993;1116.
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    • Follstaedt, D.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.