Annealing effect on the activation of 1.54 μm emission from erbium in a-Si:H matrix prepared by DC magnetron sputtering

Materials Research Society Symposium - Proceedings

Volumn 507, Issue , 1999, Pages 297-302

  Andreev, A A ^a   Golubev, V G ^a   Medvedev, A V ^a   Pevtsov, A B ^a   Voronkov, V B ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ERBIUM; HYDROGENATION; MAGNETRON SPUTTERING; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES;

PHYSICOCHEMICAL PROCESSES;

AMORPHOUS FILMS;

EID: 0032670646     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)