Design and characterization of a 50 GHz InP/InGaAs HBT amplifier

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 191-194

  Huber, A ^a   Huber, D ^a   Bergamaschi, C ^a   Morf, T ^a   Jackel, H ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

SINGLE HETEROJUNCTION BIPOLAR TRANSISTORS (SHBT);

HETEROJUNCTION BIPOLAR TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

AMPLIFIERS (ELECTRONIC);

EID: 0032670010     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)