Morphology and growth mechanism of silicon carbide chemical vapor deposited at low temperatures and normal atmosphere

Journal of Materials Science

Volumn 34, Issue 3, 1999, Pages 551-555

  Xu, Y ^a   Cheng, L ^a   Zhang, L ^a   Zhou, W ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CHEMICAL VAPOR INFILTRATION; GROWTH MECHANISM;

SILICON CARBIDE;

EID: 0032669906     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1004546712932     Document Type: Article

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