Characterization of vapour phase grown CdTe and (Cd,Zn)Te for detector applications

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 434, Issue 1, 1999, Pages 152-157

  Fiederle, M ^a,b   Feltgen, T ^b   Rogalla, M ^c   Meinhardt, J ^b   Ludwig, J ^c   Runge, K ^c   Benz, K W ^a,b  

^a Kristallographisches Institut   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

^c Universtat Regensburg   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MARKOV PROCESSES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR COUNTERS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; VAPOR PHASE EPITAXY;

CADMIUM ZINC TELLURIDE; MODIFIED MARKOV TECHNIQUE (MMT);

PARTICLE DETECTORS;

EID: 0032669641     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00451-9     Document Type: Article

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