Method of radical beam epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3725, Issue , 1999, Pages 53-57

  Butkhuzi, Tamaz V ^a   Kekelidze, Nodar P ^a   Peikrishvili, Dimitri N ^a   Chikoidze, Ekaterine G ^a   Trapaidze, Lia T ^a   Sharvashidze, Maia M ^a  

^a TBILISI STATE UNIVERSITY   (Georgia)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTIVE HOLE CONDUCTIVITY; RADICAL BEAM EPITAXY;

ELECTRIC PROPERTIES; HEAT TREATMENT; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; PRESSURE; SEMICONDUCTING ZINC COMPOUNDS; TEMPERATURE;

EPITAXIAL GROWTH;

EID: 0032669518     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)