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Volumn 11, Issue 7, 1999, Pages 809-811

Current-induced guiding and beam steering in active semiconductor planar waveguide

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT DENSITY; INTEGRATED OPTICS; LASER APPLICATIONS; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

EID: 0032669440     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.769715     Document Type: Article
Times cited : (14)

References (15)
  • 1
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    • (1996) Appl. Opt. , vol.35 , Issue.17 , pp. 3155-3162
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  • 3
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    • Performance criteria and limitations of electrooptic waveguide array deflectors
    • C. H. Bulmer, W. K. Burns, and T. G. Giallorenzi, "Performance criteria and limitations of electrooptic waveguide array deflectors," Appl. Opt., vol. 18, no. 19, pp. 3282-3295, 1979.
    • (1979) Appl. Opt. , vol.18 , Issue.19 , pp. 3282-3295
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  • 4
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    • Spatial optical beam steering with an AlGaAs integrated phased array
    • F. Vasey, F. K. Reinhart, R. Houdre, and J. M. Stauffer, "Spatial optical beam steering with an AlGaAs integrated phased array," Appl. Opt., vol. 32, no. 18, pp. 3220-3232, 1993.
    • (1993) Appl. Opt. , vol.32 , Issue.18 , pp. 3220-3232
    • Vasey, F.1    Reinhart, F.K.2    Houdre, R.3    Stauffer, J.M.4
  • 6
    • 0032068415 scopus 로고    scopus 로고
    • In-plane liquid crystal beam steering devices with a beam separation structure
    • H. Okada, P. J. Bos, and H. Onnagawa, "In-plane liquid crystal beam steering devices with a beam separation structure," Jpn. J. Appl. Phys., vol. 37, pp. 2576-2580, 1998.
    • (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 2576-2580
    • Okada, H.1    Bos, P.J.2    Onnagawa, H.3
  • 8
    • 0019590743 scopus 로고
    • Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers
    • July
    • C. H. Henry, R. A. Logan, and K. A. Bertness, "Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers," J. Appl. Phys., vol. 52, no. 7, pp. 4457-4461, July 1981.
    • (1981) J. Appl. Phys. , vol.52 , Issue.7 , pp. 4457-4461
    • Henry, C.H.1    Logan, R.A.2    Bertness, K.A.3
  • 9
    • 0020828962 scopus 로고
    • The carrier-induced index change in AlgaAs and 1.3 μm InGaAsP diode lasers
    • Oct
    • J. Manning, R. Olshansky, and C. Bin Su, "The carrier-induced index change in AlGaAs and 1.3 μm InGaAsP diode lasers," IEEE J. Quantum Electronics, vol. QE-19, pp. 1525-1530, Oct. 1983.
    • (1983) IEEE J. Quantum Electronics , vol.QE-19 , pp. 1525-1530
    • Manning, J.1    Olshansky, R.2    Bin Su, C.3
  • 10
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    • Contribution of the band-filling effect to the effective refractive-index change in double-heterostructure GaAs/AlGaAs phase modulators
    • Dec
    • J. G. Mendoza-Alvarez, R. H. Yan, and L. A. Coldren, "Contribution of the band-filling effect to the effective refractive-index change in double-heterostructure GaAs/AlGaAs phase modulators," J. Appl. Phys., vol. 62, no. 11, pp. 4548-4553, Dec. 1987.
    • (1987) J. Appl. Phys. , vol.62 , Issue.11 , pp. 4548-4553
    • Mendoza-Alvarez, J.G.1    Yan, R.H.2    Coldren, L.A.3
  • 11
    • 0025212401 scopus 로고
    • Carrier-induced change in refractive index of InP, GaAs, and InGaAsP
    • Jan
    • B. R. Bennett, R. A. Soref, and J. A. Del Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE J. Quantum Electron., vol. 26, pp. 113-122, Jan. 1990.
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  • 13
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.