Semi-numerical static model for nonplanar-drift lateral DMOS transistor

IEE Proceedings: Circuits, Devices and Systems

Volumn 146, Issue 3, 1999, Pages 139-147

  Chung, Y ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRIC CURRENTS; ELECTRIC NETWORK ANALYSIS; ELECTRIC SPACE CHARGE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

SOFTWARE PACKAGE MEDICI; SOFTWARE PACKAGE SPICE;

MOSFET DEVICES;

EID: 0032669098     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:19990228     Document Type: Article

References (8)

1. KUIVALAINEN, P., GRöNLUND, M., and RONKAINEN, H.: 'Simple analytical model for power DMOS transistors', Electron. Lett., 1992, 28, pp. 187-188
2. POCHA, M.D., and DUTTON, R.W.: 'A computer-aided design model for high-voltage double diffused MOS (DMOS) transistors', IEEEJ. Solid-State Circuits, 1976, SC-11, pp. 718-726
3. CLAESSEN, H.R., and VAN DER ZEE, P.: 'An accurate dc model for high-voltage lateral DMOS transistors suited for CACD', IEEE Trans. Electron Devices. 1986, ED-33, pp. 1964-1970
4. HONG, M.Y., and ANTON1ADIS, D.A.: 'Theoretical analysis and modeling of submicron channel length DMOS transistors', IEEE Trans. Electron Devices, 1995,42, pp. 1614-1622
5. KIM, Y.-S., POSSUM, J.G., and WILLIAMS, R.K.: 'New physical insights and models for high-voltage LDMOST 1C CAD', IEEE Trans. Electron Devices, 1991,38, pp. 1641-1649
6. KIM, Y.-S., and POSSUM, J.G.: 'Physical DMOST modeling for high-voltage 1C CAD', IEEE Trans. Electron Devices, 1990, 37, pp. 797-803
7. CONTE, S.D., and DE BOOR, C: 'Elementary numerical analysis: an algorithmic approach' (McGraw-Hill, New York, 1980, 3rd edn.), pp.398-399
8. McCALLA, W.J.: 'Fundamentals of computer-aided circuit simulation' (Kluwer Academic Publishers, 1988), pp.66-74