C(V) characterization of metal/polysilicon/oxide/monosilicon structure

Microelectronics Journal

Volumn 30, Issue 7, 1999, Pages 679-683

  Dib, H ^a   Benamara, Z ^a   Boudissa, A ^a   Zebentout, B ^a   Naoum, R ^a   Raoult, F ^b  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; MOS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

BIAS VOLTAGES; CAPACITANCE VOLTAGE CHARACTERISTICS; MONOSILICON; POLYSILICON;

HETEROJUNCTIONS;

EID: 0032668929     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(99)00010-5     Document Type: Article

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