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Volumn 201, Issue , 1999, Pages 1158-1160
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Effect of GaAs(0 0 1) surface misorientation on the emission from MBE grown InAs quantum dots
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR LASERS;
SELF-ORGANIZED GROWTH;
SEMICONDUCTING INDIUM ARSENIDE;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0032668874
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(99)00009-3 Document Type: Article |
Times cited : (12)
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References (6)
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