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Surface Science

Volumn 431, Issue 1, 1999, Pages 26-32

Positive ionization of hydrogen during scattering and sputtering from clean and passivated Si(111) surfaces

(4) Souda, R a Asari, E a Suzuki, T a Yamamoto, K b

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b KANAGAWA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; CHEMISORPTION; HELIUM; HYDROGEN; ION BOMBARDMENT; IONIZATION; SCATTERING; SPUTTERING; SURFACES;

DANGLING BOND; DIATOMIC COLLISION; HYDROGENATED SILICON; OXYGENATED SILICON;

SEMICONDUCTING SILICON;

EID: 0032668335 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(99)00515-4 Document Type: Article

Times cited : (4)

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