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Volumn 8, Issue 2, 1999, Pages 274-277
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Moisture sensitive field effect transistors using SiO2/Si3N4/Al2O3 gate structure
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Author keywords
[No Author keywords available]
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Indexed keywords
ATMOSPHERIC HUMIDITY;
ELECTRODES;
GATES (TRANSISTOR);
SEMICONDUCTOR DEVICE STRUCTURES;
THERMAL EFFECTS;
VLSI CIRCUITS;
MOISTURE SENSITIVE FIELD EFFECTS TRANSISTORS (HUMIFET);
MISFET DEVICES;
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EID: 0032668302
PISSN: 09641726
EISSN: None
Source Type: Journal
DOI: 10.1088/0964-1726/8/2/014 Document Type: Article |
Times cited : (17)
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References (19)
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