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Volumn 8, Issue 2, 1999, Pages 274-277

Moisture sensitive field effect transistors using SiO2/Si3N4/Al2O3 gate structure

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC HUMIDITY; ELECTRODES; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS; VLSI CIRCUITS;

EID: 0032668302     PISSN: 09641726     EISSN: None     Source Type: Journal    
DOI: 10.1088/0964-1726/8/2/014     Document Type: Article
Times cited : (17)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.