Temperature range for re-emission of carriers in GaAs/Ga1-xAlxAs superlattices

Microelectronics Journal

Volumn 30, Issue 7, 1999, Pages 685-688

  Kraiem, S ^a   Hassen, F ^a   Sfaxi, L ^a   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRONIC DENSITY OF STATES; HOLE TRAPS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

BAND GAP SHRINKAGE; ELECTRON HOLE PAIRS; EMISSION ENERGY; NONRADIATIVE RECOMBINATION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032667944     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(99)00011-7     Document Type: Article

References (6)

1. Jiang D.S., Juang H., Ploog K. J. Appl. Phys. 64:1988;1371.
2. Jahn U., Menniger J., Hey R., Grahn H.T. Appl. Phys. Lett. 64:1994;2382.
3. Bacher G., Hartmann C., Schwiezer H., Held T., Mahler G., Nickel H. Phys. Rev. B. 47:1993;9545.
4. Bimberg D., Christen J., Steckenborn A., Weimann G., Schlapp W. J. Lumin. 30:1985;562.
5. Sturge M.D. Phys. Rev. 127:1962;768.
6. Liu X., Nilsson S., Samuelson L., Seifert W., Souza P.L. Phys. Rev. B. 47:1993;2203.