Boundary scattering in wet-etched InAs/GaSb heterostructure wires: With and without magnetic field

Semiconductor Science and Technology

Volumn 14, Issue 5, 1999, Pages 478-483

  Rahman, F ^a,c   Thornton, T J ^a,d   Gallagher, B L ^b   Stradling, R A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^d Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; MAGNETIC FIELD EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

BOUNDARY SCATTERING; DAMAGE-FREE WIRES;

HETEROJUNCTIONS;

EID: 0032666902     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/5/318     Document Type: Article

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