GMR in Ni/Cu multilayers: an electronic structure study

Bulletin of Materials Science

Volumn 22, Issue 4, 1999, Pages 761-763

  Ghosh, S K ^a   Salunke, H G ^a   Das, G P ^a   Grover, A K ^a   Totlani, M K ^a  

^a BHABHA ATOMIC RESEARCH CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTROMAGNETIC WAVE POLARIZATION; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; FERMI LEVEL; GROUND STATE; MAGNETIZATION; MAGNETORESISTANCE; NICKEL; NUMERICAL METHODS;

FERMI VELOCITY; MAGNETIC INTERACTION ENERGIES; TIGHT BINDING LINEAR MUFFIN TIN ORBITAL METHOD;

MULTILAYERS;

EID: 0032666861     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02745601     Document Type: Article

References (9)

1. Andersen O K and Jepsen O 1984 Phys. Rev. Lett. 53 2571
2. Baibich M N, Broto J M, Fert A, Nguyen V D, Petroff P, Etienne P, Creuzet G, Friederich A and Chazelas J 1988 Phys. Rev. Lett. 61 2472
3. Bird K D and Schlesinger M 1995 J. Electrochem. Soc. 142 L65
4. Bruno P 1995 Phys. Rev. B52 411
5. Jarlborg T and Freeman A J 1980 Phys. Rev. Lett. 45 653
6. Kai T, Ohashi Y and Shiiki K 1998 J. Mag. Mag. Mater. 183 292
7. Levy P M 1994 in Solid state physics (eds) H Ehrenreich and D Turnbull Vol. 47, p. 367
8. Parkin S S P, More N and Roche K P 1990 Phys. Rev. Lett. 64 2304
9. Schwarzacher W and Lashmore D S 1996 IEEE Trans. Magn. 32 3133