Theoretical study of the density of shallow-acceptor impurity states in quantum-size GaAs microcrystals

Semiconductor Science and Technology

Volumn 14, Issue 6, 1999, Pages 496-500

  Duque, C A ^a   Montes, A ^a   Porras Montenegro, N ^b   Oliveira, L E ^c  

^a UNIVERSIDAD DE ANTIOQUIA   (Colombia)

^b UNIVERSIDAD DEL VALLE   (Colombia)

^c UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BINDING ENERGY; COMPUTATIONAL METHODS; CRYSTAL IMPURITIES; ELECTRONIC DENSITY OF STATES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

INFINITE CONFINEMENT POTENTIAL MODEL;

HETEROJUNCTIONS;

EID: 0032665550     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/6/302     Document Type: Article

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