Design considerations of the diode effective area with regard to the reverse recovery performance

Microelectronics Journal

Volumn 30, Issue 6, 1999, Pages 499-503

  Rahimo, M T ^a   Shammas, N Y A ^a  

^a STAFFORDSHIRE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIODES; ELECTRIC COMMUTATION; ELECTRIC NETWORK SYNTHESIS;

REVERSE RECOVERY PERFORMANCE;

POWER ELECTRONICS;

EID: 0032665452     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(98)00171-2     Document Type: Article

References (6)

1. N.Y.A. Shammas, M.T. Rahimo, P.T. Hoban, Effects of temperature, forward current and commutating di/dt on the reverse recovery behaviour of fast power diodes, Proc. EPE'95, Seville, 1995, pp. 1.577-1.582.
2. Benda, Spenke, Reverse recovery processes in silicon power rectifiers, IEEE Trans. on Electron Devices (1967) 1331-1354.
3. V. Benda, Design considerations for fast soft reverse recovery diodes, Proc. EPE'93, Brighton, 1993, pp. 288-292.
4. M.T. Rahimo, N.Y.A. Shammas, Emitter design effects on soft/snappy recovery in modern fast power diodes, ISPS'96, Prague, 1996, pp. 65-71.
5. J. Lutz, U. Scheuermann, Advantages of the new controlled axial lifetime diode, Proc. PCIM'94, Nurnburg, 1994.
6. P. Hoban, M.T. Rahimo, N.Y.A. Shammas, Electrical transient of snubber diodes in GTO circuits, Proc. EPE'93, Brighton, 1993, pp. 368-373.