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Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 426, Issue 1, 1999, Pages 164-168

Luminescence and electrophysical characteristics of ZnSe implanted with acceptor impurities

(7) Georgobiani, A N a Aminov, U A a Dravin, V A a Lepnev, L S a Mullabaev, I D a Ursaki, V V a Iljukhina, Z P a

a LEBEDEV PHYSICAL INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; HOLE TRAPS; ION IMPLANTATION; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS; THERMAL EFFECTS;

ZINC SELENIDE;

LIGHT EMITTING DIODES;

EID: 0032664873 PISSN: 01689002 EISSN: None Source Type: Journal
DOI: 10.1016/S0168-9002(98)01486-7 Document Type: Article

Times cited : (7)

References (11)

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7
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