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Volumn 3628, Issue , 1999, Pages 158-168
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Three years of InGaN quantum-well lasers: commercialization already
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
DISLOCATIONS (CRYSTALS);
EPITAXIAL GROWTH;
HETEROJUNCTIONS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR QUANTUM WELLS;
SERVICE LIFE;
TEMPERATURE;
INDIUM GALLIUM NITRIDE QUANTUM WELL LASERS;
LATERAL GROWTH;
LIFETIME;
VIOLET LASERS;
SEMICONDUCTOR LASERS;
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EID: 0032664425
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.344525 Document Type: Conference Paper |
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Times cited : (4)
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References (39)
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