High-current characterization of dual-damascene copper interconnects in SiO2- and low-k interlevel dielectrics for advanced CMOS semiconductor technologies

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1999, Pages 144-153

  Voldman, S ^a   Gauthier, R ^a   Morrisseau, K ^a   Hargrove, M ^a   McGahay, V ^a   Gross, V ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COPPER; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); DIELECTRIC MATERIALS; ELECTRIC DISCHARGES; ELECTRIC RESISTANCE; ELECTROSTATICS; PERMITTIVITY; SILICA;

DUAL DAMASCENE COPPER INTERCONNECTS; ELECTRO STATIC DISCHARGE; HIGH CURRENT RESISTANCE CHANGE; LOW-K INTERLEVEL DIELECTRICS;

CMOS INTEGRATED CIRCUITS;

EID: 0032664172     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (37)