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Volumn 38, Issue 2 B, 1999, Pages 1040-1043
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Real-time observation of electron-beam induced mass transport in strained InGaAs/AlGaAs layers on GaAs (100) and (311)B substrates
a
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Author keywords
Electron beam irradiation; Mass transport; Quantum disk; Strained InGaAs AlGaAs layers; Surface deformation
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Indexed keywords
DEFORMATION;
ELECTRIC POTENTIAL;
ELECTRON IRRADIATION;
MASS TRANSFER;
METALLORGANIC VAPOR PHASE EPITAXY;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR GROWTH;
STRAIN;
SUBSTRATES;
SURFACE PROPERTIES;
ALUMINUM GALLIUM ARSENIDE;
QUANTUM DISK;
RESIDUAL STRAIN RELAXATION;
SURFACE DEFORMATION;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0032663839
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.38.1040 Document Type: Article |
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Times cited : (6)
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References (12)
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