Doping dependence of the mobility enhancement in surface-channel strained-Si layers

Nanotechnology

Volumn 10, Issue 2, 1999, Pages 147-152

  Vasileska, Dragica ^a   Formicone, Gabriele ^b   Ferry, David K ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EPITAXIAL GROWTH; HETEROJUNCTIONS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

MOBILITY ENHANCEMENT;

SEMICONDUCTING SILICON;

EID: 0032663798     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/10/2/308     Document Type: Article

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