Statistical modeling of MOS transistor mismatch based on the parameters' autocorrelation function

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn 6, Issue , 1999, Pages

  Conti, Massimo ^a   Crippa, Paolo ^a   Orcioni, Simone ^a   Turchetti, Claudio ^a  

^a UNIVERSITÀ POLITECNICA DELLE MARCHE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOCORRELATION-BASED MISMATCH MODE;

CORRELATION METHODS; SEMICONDUCTOR DEVICE MODELS;

MOSFET DEVICES;

EID: 0032663174     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)

1. Pelgrom M.J.M., Duinmaijer A.C.J., and Welbers A.P.G., "Matching Properties of MOS Transistors," IEEE Journal of Solid-State Circuits, vol. 24, n. 5, pp. 1433-1439, Oct, 1989.
2. Conti M., Crippa P., Orcioni S., and Turchetti C, "Parametric Yield Formulation of MOS IC's Affected by Mismatch Effect," IEEE Trans, on Computer-Aided Design of Integrated Circuits and Systems, vol. 18, n. 5, May, 1999.
3. Michael C, and Ismail M. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits. Boston: Kluwer Academic Publishers, 1993.