![]() |
Volumn 38, Issue 3 A, 1999, Pages 1534-1538
|
Change in the oxidation state of the adsorbed oxygen equilibrated at 25°C on ZnO surface during room temperature annealing after rapid quenching
|
Author keywords
ESR; Non ohmic; Oxidation state; Semiconductor; Surface; ZnO
|
Indexed keywords
ADSORPTION;
ANNEALING;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC PROPERTIES;
ELECTRON TRAPS;
GRAIN BOUNDARIES;
MAGNETIC VARIABLES MEASUREMENT;
OXIDATION;
OXYGEN;
QUENCHING;
SURFACE TREATMENT;
BRANAUER-EMMET-TELLER METHOD;
ELECTRON SPIN RESONANCE MEASUREMENT;
SECONDARY ELECTRON MICROSCOPY;
SURFACE ENERGY BARRIER;
SEMICONDUCTING ZINC COMPOUNDS;
|
EID: 0032662996
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.38.1534 Document Type: Article |
Times cited : (26)
|
References (15)
|