Temperature-dependent exciton recombination in asymmetrical ZnCdSe/ZnSe double quantum wells

Journal of Physics D: Applied Physics

Volumn 32, Issue 13, 1999, Pages 1506-1510

  Yu, Guangyou ^a   Fan, X W ^a   Zhang, J Y ^a   Zheng, Z H ^a   Yang, B J ^a   Zhao, Xiaowel ^a   Shen, Dezhen ^a   Kong, Xianggui ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; PHOTOLUMINESCENCE; PYROLYSIS; SEMICONDUCTING ZINC COMPOUNDS; SPECTRUM ANALYSIS; TEMPERATURE;

EMISSION INTENSITY; EXCITON RECOMBINATION; EXCITON TUNNELING; PHOTOLUMINESCENCE DECAY SPECTRA; RECORDING PHOTOLUMINESCENCE SPECTRA; ZINC CADMIUM SELENIDE; ZINC SELENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032662704     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/13/311     Document Type: Article

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