PTCR behaviour of highly donor doped BaTiO3

Journal of the European Ceramic Society

Volumn 19, Issue 6-7, 1999, Pages 913-916

  Urek, S ^a   Drofenik, M ^a  

^a JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

Defects; Electrical properties; Grain boundary; La doped BaTiO3; PTC devices

Indexed keywords

DOPING (ADDITIVES); ELECTRIC PROPERTIES; GRAIN BOUNDARIES; LANTHANUM; SCANNING ELECTRON MICROSCOPY; SINTERING; SPECTROSCOPY;

DONOR DOPANT; PTCR;

BARIUM TITANATE;

EID: 0032661868     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0955-2219(98)00343-4     Document Type: Article

References (6)

1. 3. J. Am. Ceram. Soc. 70:(5):1987;311-314.
2. Drofenk M. Initial morphology and grain growth in donor-doped barium titanate. J. Am. Ceram. Soc. 75:(9):1992;2383-2389.
3. Park Y., Kim H.G. Dielectric temperature characteristic of cerium-modified barium titanate based ceramic with core-shell grain structure. J. Am. Ceram. Soc. 80:(1):1997;106-112.
4. 3 positive temperature coefficient of resistance devices. J. Phys. D; Appl. Phys. 20:1987;1645-1651.
5. Daniels J., Wemick R. New aspects of an improved PTC model. Philips. Res. Rep. 31:1976;544-559.
6. Hujbrechts B., Ishizaki K., Takate M. Experimental evaluation of the acceptor-states compensation in positive temperature coefficient type barium titanate. J. Am. Ceram. Soc. 75:(3):1992;722-724.