High current bond design rules based on bond pad degradation and fusing of the wire

Microelectronics Reliability

Volumn 39, Issue 1, 1999, Pages 77-88

  Krabbenborg, B ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; FAILURE ANALYSIS; THERMAL STRESS;

GOLD BOND WIRES; HIGH CURRENT BOND;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0032661660     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00204-2     Document Type: Article

References (4)

1. de Schepper L, Stals LM, Tielemans L, Roggen J Accurate measurements and intepretation of resistance changes in off-chip interconnections due to aging in an inert gas atmosphere. In: Euromat 89. Aachen, Germany, 22-24 November, 1989.
2. Ragay FW, vd Pol JA, Naderman J. In-situ monitoring of dry corrosion degradation of Au ball bonds to A1 bond pads in plastic packages during HTSL. Microelectronics Reliability 1996;36:1931-4.
3. v.d. Burgt L. Current capability of bond wires in semiconductors. In: Philips Semiconductors, Internal report. Nijmegen, 1994.
4. FAILURE user's manual. DESTIN N.V., 1997.