Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for X-ray detector applications

Journal of Electronic Materials

Volumn 28, Issue 6, 1999, Pages 695-699

  Lovergine, N ^a   Prete, P ^b   Cola, A ^b   Mazzer, M ^b   Cannoletta, D ^a   Mancini, A M ^a  

^a INFM   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; HYDROGEN; MELTING; PARTIAL PRESSURE; RADIATION DETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; SUPERSATURATION; THERMODYNAMICS; VAPOR PHASE EPITAXY;

HYDROGEN TRANSPORT VAPOR PHASE EPITAXY; X RAY DETECTORS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0032660293     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0056-4     Document Type: Article

References (6)

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