Pressure and Hall sensors: What does MBE allow to do?

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 727-733

  Robert, J L ^a   Contreras, S ^a   Sicart, J ^a   Mosser, V ^b   Kobbi, F ^c  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b SCHLUMBERGER   (France)

^c SCHLUMBERGER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT TRANSDUCERS; HETEROJUNCTIONS; MAGNETIC SEMICONDUCTORS; PRESSURE TRANSDUCERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SENSORS;

MAGNETIC SENSORS; PRESSURE SENSORS;

MOLECULAR BEAM EPITAXY;

EID: 0032659930     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01458-4     Document Type: Article

References (22)

1. Adams E.N. Phys. Rev. 96:1954;803.
2. J.L. Robert, V. Mosser, S. Contreras, 6th International Conference on Solid State Sensors, Actuators, Transducer, San Francisco USA, 1991, pp. 294-299.
3. V. Mosser, J.L. Robert, S. Contreras, Patents FR9003571, EP0335793, US5187984.
4. Chadi D.J., Chang K.J. Phys. Rev. B. 39:1989;10063.
5. Gibart P., Williamson D.L., Moser J., Basmaji P. Phys. Rev. Lett. 65:1990;1144.
6. Dobaczewski L., Kazcor P. Phys. Rev. Lett. 66:1991;68.
7. Wolk J.A., Kriger M.B., Heyman J.N., Walukiewisz W., Jeanloz R., Haller E.E. Phys. Rev. Lett. 66:1991;774.
8. Mosser V., Contreras S., Robert J.L., Piotrzkowski R., Zawadzki W., Rochette T.F. Phys. Rev. Lett. 66:1991;1737.
9. Mooney P.M. Semicon. Sci. Technol. 6:1991;B1.
10. Mooney P.M., Theis T.N., Wright S.L. Appl. Phys. Lett. 53:1988;2546.
11. Baba T., Mizuta M., Fujisawa T., Yoshino J., Kukimoto H. Jpn. J. Appl. Phys. 28:1989;L891.
12. Jantsch W., Wilamowski Z., Ostermayer G. Semicond. Sci. Technol. 6:1991;B47.
13. Piotrzkowski R. Semicond. Sci. Technol. 7:1992;103.
14. Mosser V., Contreras S., Lorenzini P., Robert J.L. Mater. Sci. Forum. 143-147:1994;1117.
15. Contreras S., Lorenzini P., Mosser V., Robert J.L., Piotrzkowski R. Jpn. J. Appl. Phys. 32:1993;197.
16. Sellitto P., Sicart J., Robert J.L., Planel R. Phys. Rev. B. 51:1995;16778.
17. Robert J.L., Bosc F., Sicart J. Phys. Stat. Sol. B. 198:1996;189.
18. Robert J.L., Bosc F., Sicart J., Mosser V. Phys. Stat. Sol. B. 211:1999;481.
19. V. Mosser, S. Contreras, S. Aboulhouda, Ph. Lorenzini, F. Kobbi, J.L. Robert, K. Zekentes, Proceedings of the 23rd European Solid State Device Research Conference ESSDERC Grenoble, Edition Frontière, 1993, p. 659.
20. V. Mosser, J.L. Robert, Patents: FR 2691839, EP 0572298 and US 5442221.
21. V. Mosser, S. Contreras, S. Aboulhouda, Ph. Lorenzini, F. Kobbi, J.L. Robert, K. Zekentes, Proceeding of the 7th International Conference on Solid-State Sensors and Actuators, Transducer'93, Yokohama, Japan, 1993, p. 908.
22. V. Mosser, F. Kobbi, S. Contreras, J.M. Mercy, O. Callen, J.L. Robert, S. Aboulhouda, J. Chevrier and D. Adam, Proceeding of the International Conference on Solid-State Sensors and Actuators, Transducers'97, Chicago, 1997, p. 401.