HTS quasiparticle injection devices with large current gain at 77 K

IEEE Transactions on Applied Superconductivity

Volumn 9, Issue 2 PART 3, 1999, Pages 3648-3651

  Schneider, C W ^a   Moerman, R ^a   Fuchs, D ^a   Schneider, R ^a   Gerritsma, G J ^a   Rogalla, H ^a  

^a KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; EPITAXIAL GROWTH; GRAIN BOUNDARIES; MAGNETRON SPUTTERING; STRONTIUM COMPOUNDS; SUPERCONDUCTING DEVICES; SURFACE ROUGHNESS; TEMPERATURE; YTTRIUM COMPOUNDS;

EPITAXIAL INJECTION BARRIER; GRAIN BOUNDARY JUNCTIONS; INVERTED CYLINDRICAL MAGNETRON SPUTTERING; QUASIPARTICLE INJECTION DEVICES; STRONTIUM TITANATE; ULTRATHIN TUNNELING BARRIER; YTTRIUM BARIUM CUPRATES;

HIGH TEMPERATURE SUPERCONDUCTORS;

EID: 0032659531     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.783819     Document Type: Article

References (10)

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