Effect of lead resistance on spin-dependent tunneling junction with ion-beam deposited AlN barrier

Journal of Magnetism and Magnetic Materials

Volumn 198, Issue , 1999, Pages 170-172

  Lai, Chih Huang ^a   Wang, Lien Chang ^b   Tong, Hua Ching ^b   Crue, Bill ^b   Shi, Zhupei ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b WESTERN DIGITAL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; FINITE ELEMENT METHOD; ION BEAMS; NEGATIVE RESISTANCE; NITRIDES;

ALUMINUM NITRIDE; SPIN DEPENDENT TUNNELING;

TUNNEL JUNCTIONS;

EID: 0032656602     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(98)01045-2     Document Type: Article

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