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Volumn 38, Issue 7 B, 1999, Pages
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Laser-induced damage threshold and surface processing of GaN at 400 nm wavelength
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
EPITAXIAL GROWTH;
FILM GROWTH;
LASER ABLATION;
LASER PULSES;
OPTICAL MICROSCOPY;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
ULTRAFAST PHENOMENA;
GALLIUM NITRIDE;
LIGHT-MATTER INTERACTION;
SEMICONDUCTING FILMS;
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EID: 0032655286
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.38.l839 Document Type: Article |
Times cited : (28)
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References (0)
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