Coherent dynamics of excitons in an island-inserted GaAs/AlAs quantum well structure: Suppression of phase relaxation and a deep quantum beat

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 5 A, 1999, Pages 2735-2740

  Matsusue, Toshio ^a   Akiyama, Hidefumi ^b   Saiki, Toshibaru ^b,e   Ramkumar, Chari ^b   Shirane, Masayuki ^b   Shimano, Ryo ^b   Kuwata Gonokami, Makoto ^b   Sakaki, Hiroyuki ^c,d  

^a CHIBA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^e KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Biexciton; Degenerated four wave mixing; Exciton; GaAs AlAs heterostructure; Island inserted quantum well; Localization; Phase relaxation; Quantum beat

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTROMAGNETIC WAVE ABSORPTION; EXCITONS; FOUR WAVE MIXING; HETEROJUNCTIONS; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM ARSENIDE; BIEXCITONIC EFFECTS; PHASE RELAXATION; QUANTUM BEAT; SELF-DIFFRACTION GEOMETRY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032654333     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2735     Document Type: Article

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